CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY

被引：10
|
作者：
CROWDER, SW
GRIFFIN, PB
PLUMMER, JD
机构：
[1] Integrated Circuits Laboratory, Stanford University, Stanford
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期
关键词：
D O I：
10.1063/1.112968
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic force microscopy (AFM) has been used to characterize the topography of the buried Si-SiO2 interface in Bonded, single-implant Separation by IMplantation of OXygen (SIMOX), and multiple-implant SIMOX silicon-on-insulator material. The properties of this interface have important implications for processing and for device performance. The root-mean-square surface roughness was found to be 11.4 nm for single-implant material, 2.9 nm for multiple-implant material, and less than 1.5 nm for bonded material.
引用
收藏
页码：1698 / 1699
页数：2
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