P-TYPE AND N-TYPE SILICON AND THE FORMATION OF THE PHOTOVOLTAIC BARRIER IN SILICON INGOTS - DISCUSSION

被引：0
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作者：
ELLIS, WC
SCAFF, JH
ROBERTSON, WD
STAUSS, HE
BLOOM, MC
机构：
来源：
TRANSACTIONS OF THE AMERICAN INSTITUTE OF MINING AND METALLURGICAL ENGINEERS | 1950年 / 188卷 / 08期
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TU [建筑科学];
学科分类号：
0813 ;
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页码：1027 / 1027
页数：1
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