LOW-TEMPERATURE DRY-ETCHING OF TUNGSTEN, DIELECTRIC, AND TRILEVEL RESIST LAYERS ON GAAS

被引：10

作者：

PEARTON, SJ ^{[1
]}

ABERNATHY, CR ^{[1
]}

REN, F ^{[1
]}

LOTHIAN, JR ^{[1
]}

KOPF, RF ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 1994年 / 14卷 / 04期

关键词：

PLASMA ETCHING; GAAS DEVICES; LOW TEMPERATURE;

D O I：

10.1007/BF01570209

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Dry etching of common masking materials used in GaAs device technology was examined down to temperatures of -30 degrees C. The etch rates of SiNx, siO(2), and W in SF6/Ar are reduced below 0 degrees C, but the anisotropy of the etching is improved at low temperature. Microwave enhancement of the SF6/Ar discharges produces increases in etch rates of several times at 25 degrees C, but much lower increases at -30 degrees C substrate temperature. The underlying GaAs surface shows increased S and F coverage after low-temperature etching, but these species are readily removed either by an ex-situ wet chemical cleaning step or an in-situ H-2 plasma exposure. Photoresist etching is less sensitive to temperature, and anisotropic profiles are produced between -30 and +60 degrees C in pure O-2 discharges.

引用

页码：505 / 522

页数：18

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