HIGH-FIELD TRANSPORT PHENOMENOLOGY - HOT-ELECTRON GENERATION AT SEMICONDUCTOR INTERFACES

被引：19
|
作者：
BLATTER, G [2 ]
BAERISWYL, D
机构：
[1] CORNELL UNIV,ATOM & SOLID STATE PHYS LAB,ITHACA,NY 14853
[2] BROWN BOVERI & CO LTD,RES CTR,CH-5405 BADEN,SWITZERLAND
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.36.6446
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6446 / 6464
页数：19
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