ROOM-TEMPERATURE 2.78 MU-M ALGAASSB/INGAASSB QUANTUM-WELL LASERS

被引：72

作者：

LEE, H ^{[1
]}

YORK, PK ^{[1
]}

MENNA, RJ ^{[1
]}

MARTINELLI, RU ^{[1
]}

GARBUZOV, DZ ^{[1
]}

NARAYAN, SY ^{[1
]}

CONNOLLY, JC ^{[1
]}

机构：

[1] DAVID SARNOFF RES CTR,CN-5300,PRINCETON,NJ 08543

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 15期

关键词：

D O I：

10.1063/1.113284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe room-temperature 2.78 μm AlGaAsSb/InGaAsSb multiquantum well lasers. Pulsed laser operation was observed at 15°C with a threshold current of 1.1 A (10kA/cm2), and a maximum power output of 30 mW, and a maximum differential quantum efficiency of 9%. Lasers operated pulsed up to 60°C with a characteristic temperature of 58 K over the range of 0-40°C. To date, 2.78 μm is the longest emission wavelength for a room-temperature III-V laser.© 1995 American Institute of Physics.

引用

页码：1942 / 1944

页数：3

共 50 条

[41] Room-temperature 3.73 μm GaSb-based type-I quantum-well lasers with quinternary barriers
Vizbaras, Kristijonas
Amann, Markus-Christian
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (03)
[42] Room-temperature midinfrared type-II quantum-well lasers with high power efficiency
Lin, CH
Murry, SJ
Yang, RQ
Yang, BH
Pei, SS
Yan, C
Gianardi, DM
McDaniel, DL
Falcon, M
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1435 - 1438
[43] NEW SEMICONDUCTOR INJECTION-LASERS FOR CW, ROOM-TEMPERATURE OPERATION AT 1 MU-M WAVELENGTHS
NAHORY, RE
POLLACK, MA
DIXON, RW
OPTICS COMMUNICATIONS, 1976, 18 (01) : 37 - 38
[44] 1.3 MU-M CW OPERATION OF GAINASP/INP DH DIODE-LASERS AT ROOM-TEMPERATURE
OE, K
ANDO, S
SUGIYAMA, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1273 - 1274
[45] INJECTION-LASERS OF SPECTRAL RANGE OF 2.0-2.4 MU-M OPERATING AT ROOM-TEMPERATURE
AKIMOVA, IV
BOCHKAREV, AE
DOLGINOV, LM
DRAKIN, AE
DRUZHININA, LV
ELISEEV, PG
SVERDLOV, BN
SKRIPKIN, VA
ZHURNAL TEKHNICHESKOI FIZIKI, 1988, 58 (04): : 701 - 707
[46] OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers
C. A. Wang
H. K. Choi
Journal of Electronic Materials, 1997, 26 : 1231 - 1236
[47] OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers
Wang, CA
Choi, HK
JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) : 1231 - 1236
[48] 2-COLOR QUANTUM-WELL INFRARED PHOTODETECTOR WITH PEAK SENSITIVITIES AT 3.9 MU-M AND 8.1 MU-M
TSAI, KL
LEE, CP
TSANG, JS
CHEN, HR
ELECTRONICS LETTERS, 1994, 30 (16) : 1352 - 1353
[49] Room-temperature 2.63 μm GaInAsSb/GaSb strained quantum-well laser diodes
Cuminal, Y
Baranov, AN
Bec, D
Grech, P
Garcia, M
Boissier, G
Joullié, A
Glastre, G
Blondeau, R
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) : 283 - 288
[50] Room-temperature 2.63 μm GalnAsSb/GaSb strained quantum-well laser diodes
Ctr. d'Electron. M., UMR CNRS No 5507, Université de Montpellier II, case 067, 34095 Montpellier Cédex 05, France
不详
Semicond Sci Technol, 3 (283-288):

← 1 2 3 4 5 →