Application of the Anderson model for describing the phase metal-insulator transition

被引：0

作者：

Shrekeshev, I. K. ^{[1
]}

机构：

[1] AlFarabi Kazakh National Univ, Alma Ata, Kazakhstan

来源：

BULLETIN OF THE UNIVERSITY OF KARAGANDA-PHYSICS | 2011年 / 4卷 / 64期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The phase metal-insulator transition induced by disorder is investigated. The examples of experimental observation of the transition in semiconductor microstructures are presented. On the basis of the general Schrodinger equation the second-quantization formalism is developed for lattices. The application of the Anderson model for describing the electronic properties of conductivity in disordered solids is justified. The possibility of comparison between the results of the discrete model and experiment is discussed.

引用

页码：19 / 24

页数：6

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