OPTICALLY PUMPED HG1-XZNXTE LASERS GROWN BY LIQUID-PHASE EPITAXY

被引:3
|
作者
RAVID, A [1 ]
ZUSSMAN, Z [1 ]
SHER, A [1 ]
SHAPIRA, Y [1 ]
机构
[1] TEL AVIV UNIV,FAC ENGN,IL-69978 TEL AVIV,ISRAEL
关键词
D O I
10.1063/1.104679
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optically pumped stimulated emission is reported for the first time from Hg1-xZn(x)Te(x almost-equal-to 0.23) epilayers grown by liquid phase epitaxy. Pulsed lasing was observed up to 70 K. Maximum single mirror peak power output of 23 and 2 mW was measured at 12 and 70 K, respectively. The laser emission spectra consisted of a strong line around 5.4-mu-m, and a weaker one, 6-7 meV below it, which were attributed to band-to-band and to band-to-acceptor transitions. Far-field patterns with angular width of theta-1 = 4-degrees and theta-//almost-equal-to 2.5-degrees have been observed perpendicular and parallel to the layer plane, respectively.
引用
收藏
页码:337 / 339
页数:3
相关论文
共 50 条
  • [1] THE PERFORMANCE OF HG1-XZNXTE PHOTODIODES
    ROGALSKI, A
    RUTKOWSKI, J
    JOZWIKOWSKI, K
    PIOTROWSKI, J
    NOWAK, Z
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (04): : 379 - 384
  • [2] INDIUM DOPING OF HG1-XCDXTE GROWN BY LIQUID-PHASE EPITAXY
    BOECK, T
    FRANK, C
    GUNTHER, H
    JACOBS, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 129 (1-2) : 233 - 238
  • [3] PROPERTIES OF HG1-XZNX TE GROWN BY LIQUID-PHASE EPITAXY
    SHER, A
    EGER, D
    ZEMEL, A
    FELDSTEIN, H
    RAIZMAN, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2024 - 2027
  • [4] ON THE PERFORMANCE OF HG1-XZNXTE PHOTORESISTORS
    JOZWIKOWSKI, K
    ROGALSKI, A
    PIOTROWSKI, J
    ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 359 - 362
  • [5] CALCULATION OF THE CARRIER LIFETIME IN HG1-XZNXTE
    NIEDZIELA, T
    ROGALSKI, A
    PIOTROWSKI, J
    INFRARED PHYSICS, 1988, 28 (05): : 311 - 319
  • [6] MICROHARDNESS OF HG1-XCDXTE AND HG1-XZNXTE
    FISSEL, A
    SCHENK, M
    CRYSTAL RESEARCH AND TECHNOLOGY, 1990, 25 (01) : 89 - 95
  • [7] LIQUID-PHASE EPITAXY OF HG1-XCDXTE
    SCHMIT, JL
    HAGER, RJ
    WOOD, RA
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 485 - 489
  • [8] LIQUID-PHASE EPITAXY OF HG1-XCDXTE
    HARMAN, TC
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 724 - 724
  • [9] GROWTH OF HG1-XZNXTE BY MOLECULAR-BEAM EPITAXY ON A GAAS (100) SUBSTRATE
    SIVANANTHAN, S
    CHU, X
    BOUKERCHE, M
    FAURIE, JP
    APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1291 - 1293
  • [10] HG1-XZNXTE AS A POTENTIAL INFRARED DETECTOR MATERIAL
    ROGALSKI, A
    PROGRESS IN QUANTUM ELECTRONICS, 1989, 13 (04) : 299 - 353