ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS

被引：39
|
作者：
TOYABE, T
ASAI, S
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 02期
关键词：
D O I：
10.1109/JSSC.1979.1051188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：375 / 383
页数：9
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