ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：54

|

作者：

UWAI, K

NAKAGOME, H

TAKAHEI, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1010 / 1012

页数：3

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