GROWTH AND CHARACTERIZATION OF 2-DIMENSIONAL ELECTRON-GAS INGAP/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE

被引：0
|
作者：
JAGADISH, C
ALLERMAN, AA
HAUSER, N
HSU, CC
GAL, M
机构：
[1] CHINESE UNIV HONG KONG,DEPT ELECTR ENGN,SHERTIN,HONG KONG
[2] UNIV NEW S WALES,SCH PHYS,SYDNEY,NSW 2033,AUSTRALIA
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)91170-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the growth of lattice-matched InGaP/GaAs heterostructures by metalorganic chemical vapour deposition (MOCVD) using TEA and TBP as group V sources. Transmission electron microscopy and X-ray diffraction showed that InGaP is ordered. Photoluminescence measurements at 13 K showed an emission at 1.917 eV which is close to the band gap reported for ordered InGaP. Shubnikov-De Haas oscillations observed at 4.2 K confirmed the presence of two-dimensional electron gas at the interface of this heterostructure. No persistent photoconductivity was observed in these structures.
引用
收藏
页码：953 / 957
页数：5
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