GROWTH AND CHARACTERIZATION OF 2-DIMENSIONAL ELECTRON-GAS INGAP/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE

被引：0
|
作者：
JAGADISH, C
ALLERMAN, AA
HAUSER, N
HSU, CC
GAL, M
机构：
[1] CHINESE UNIV HONG KONG,DEPT ELECTR ENGN,SHERTIN,HONG KONG
[2] UNIV NEW S WALES,SCH PHYS,SYDNEY,NSW 2033,AUSTRALIA
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)91170-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the growth of lattice-matched InGaP/GaAs heterostructures by metalorganic chemical vapour deposition (MOCVD) using TEA and TBP as group V sources. Transmission electron microscopy and X-ray diffraction showed that InGaP is ordered. Photoluminescence measurements at 13 K showed an emission at 1.917 eV which is close to the band gap reported for ordered InGaP. Shubnikov-De Haas oscillations observed at 4.2 K confirmed the presence of two-dimensional electron gas at the interface of this heterostructure. No persistent photoconductivity was observed in these structures.
引用
下载
收藏
页码：953 / 957
页数：5
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE CHARACTERIZATION OF INGAP/GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    NITTONO, T
    SUGITANI, S
    HYUGA, F
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) : 5387 - 5390
  • [2] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INGAP USING TERTIARYBUTYLPHOSPHINE
    KAWAKYU, Y
    HORI, H
    ISHIKAWA, H
    MASHITA, M
    JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 561 - 564
  • [3] 2-DIMENSIONAL ELECTRON-GAS IN GAN-ALGAN HETEROSTRUCTURES DEPOSITED USING TRIMETHYLAMINE-ALANE AS THE ALUMINUM SOURCE IN LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    KHAN, MA
    CHEN, Q
    SUN, CJ
    SHUR, M
    GELMONT, B
    APPLIED PHYSICS LETTERS, 1995, 67 (10) : 1429 - 1431
  • [4] IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    FENG, MS
    LIN, KC
    WU, CC
    CHEN, HD
    SHANG, YC
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 672 - 678
  • [5] GROWTH OF INP EPITAXIAL LAYERS BY RAPID THERMAL LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, USING TERTIARYBUTYLPHOSPHINE
    KATZ, A
    FEINGOLD, A
    MORIYA, N
    NAKAHARA, S
    ABERNATHY, CR
    PEARTON, SJ
    ELROY, A
    GEVA, M
    BAIOCCHI, FA
    LUTHER, LC
    LANE, E
    APPLIED PHYSICS LETTERS, 1993, 63 (21) : 2958 - 2960
  • [6] CHARACTERIZATION OF HIGH-QUALITY INGAP/GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    CALDIRONI, M
    VITALI, L
    DELLAGIOVANNA, M
    DIPAOLA, A
    VIDIMARI, F
    PELLEGRINO, S
    FERRARI, C
    FRANZOSI, P
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 158 - 163
  • [7] PHOTOCONDUCTANCE MEASUREMENTS ON INTISB/INSB/GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    STAVETEIG, PT
    CHOI, YH
    LABEYRIE, G
    BIGAN, E
    RAZEGHI, M
    APPLIED PHYSICS LETTERS, 1994, 64 (04) : 460 - 462
  • [8] OPTICAL AND ELECTRICAL QUALITY OF INGAP GROWN ON GAAS WITH LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    HAGEMAN, PR
    VANGEELEN, A
    GABRIELSE, W
    BAUHUIS, GJ
    GILING, LJ
    JOURNAL OF CRYSTAL GROWTH, 1992, 125 (1-2) : 336 - 346
  • [9] HEAVILY SI-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND SILANE
    CHICHIBU, S
    IWAI, A
    MATSUMOTO, S
    HIGUCHI, H
    APPLIED PHYSICS LETTERS, 1992, 60 (04) : 489 - 491
  • [10] HETEROEPITAXY AND CHARACTERIZATION OF CUGASE2 LAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHICHIBU, S
    HARADA, Y
    UCHIDA, M
    WAKIYAMA, T
    MATSUMOTO, S
    SHIRAKATA, S
    ISOMURA, S
    HIGUCHI, H
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) : 3009 - 3015
12345