FABRICATION OF HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR WITH A DOPING-SUPERLATTICE COLLECTOR

被引：6
|
作者：
SUN, CY
LIU, WC
GUO, DF
LOUR, WS
LIU, RC
机构：
[1] PRIVATE KUNG SHAN INST TECHNOL & COMMERCE,DEPT ELECT ENGN,TAINAN,TAIWAN
[2] CHUNG SHAN INST SCI & TECHNOL,LUNGTAN,TAIWAN
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1993年 / 13卷 / 01期
关键词：
D O I：
10.1006/spmi.1993.1015
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Grown by molecular beam epitaxy, a sawtooth-doping-superlattice (SDS) structure has been employed in the collector region of a heterostructure-emitter bipolar transistor. For the studied structure, conventional transistor behavior and controllable S-shaped negative-differential-resistance (NDR) performance were simultaneously achieved. First, due to the avalanche multiplications within SDS periods or emitter-base p-n junction depletion region, a bi-directional switching phenomenon was exhibited under the two-terminal operation. In addition, when a base current or bias was applied, transistor properties and a controllable S-shaped NDR family in the large current regime were obtained. The best common-emitter current gain was 25. © 1993 Academic Press. All rights reserved.
引用
收藏
页码：75 / 79
页数：5
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