EFFECT OF SODIUM IONS ON FIELD-ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON

被引：0
|
作者：
OSBURN, CM
RAIDER, SI
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] IBM CORP,COMPONENTS DIV,HOPEWELL JUNCTION,NY 12533
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C240 / C240
页数：1
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