SILICON-FLUORINE BONDING AND FLUORINE PROFILING IN SIO2-FILMS GROWN BY NF3-ENHANCED OXIDATION

被引：7
|
作者：
KOUVATSOS, D [1 ]
MCCLUSKEY, FP [1 ]
JACCODINE, RJ [1 ]
STEVIE, FA [1 ]
机构：
[1] AT&T BELL LABS,ALLENTOWN,PA 18103
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 07期
关键词：
D O I：
10.1063/1.107796
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The incorporation and chemical bonding of fluorine introduced in SiO2 thin films by NF3-enhanced oxidation of silicon has been studied by means of x-ray photoelectron spectroscopy and secondary ion mass spectrometry depth profiling. Fluorine bonding in the oxide network is observed, indicated to occur in the area of the oxidizing interface and resulting in depth profiles which reflect the manner of the exposure of the growing oxide to the NF3 fluorine source during oxidation.
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页码：780 / 782
页数：3
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