2 SELECTIVE ETCHING SOLUTIONS FOR GAAS ON INGAAS AND GAAS/ALGAAS ON INGAAS

被引：15
|
作者：
HILL, DG
LEAR, KL
HARRIS, JS
机构：
[1] Stanford Electronics Laboratories, Stanford
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 09期
关键词：
D O I：
10.1149/1.2087098
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Two solutions for selectively etching GaAs on InGaAs and GaAs/AIGaAs on InGaAs are presented. A solution of H2O2/NH4OH is shown to have a GaAs etch rate more than 50 times higher than the etch rate of Ino.1Gao.9As. A solution of K3Fe(CN)6/K4Fe(CN)6 etches both GaAs and Al0.3Ga0.7As selectively relative to InGaAs, with a selectivity of 8 or more for Ino.12Gao.88 As. copyright. © 1990, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码：2912 / 2914
页数：3
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