MONOLITHIC INTEGRATION OF GAAS-MESFET AND INP/INGAASP 2X2 OPTICAL SWITCH

被引：1

作者：

POLLENTIER, I ^{[1
]}

BUYDENS, L ^{[1
]}

DEMEESTER, P ^{[1
]}

VANDAELE, P ^{[1
]}

ENARD, A ^{[1
]}

LALLIER, E ^{[1
]}

GLASTRE, G ^{[1
]}

RONDI, D ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 25期

关键词：

INTEGRATED OPTICS; OPTICAL SWITCHING;

D O I：

10.1049/el:19911448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2 x 2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.

引用

页码：2339 / 2340

页数：2

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