MONOLITHIC INTEGRATION OF GAAS-MESFET AND INP/INGAASP 2X2 OPTICAL SWITCH

被引：1
|
作者：
POLLENTIER, I [1 ]
BUYDENS, L [1 ]
DEMEESTER, P [1 ]
VANDAELE, P [1 ]
ENARD, A [1 ]
LALLIER, E [1 ]
GLASTRE, G [1 ]
RONDI, D [1 ]
机构：
[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 25期
关键词：
INTEGRATED OPTICS; OPTICAL SWITCHING;
D O I：
10.1049/el:19911448
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2 x 2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.
引用
收藏
页码：2339 / 2340
页数：2
相关论文
共 50 条
  • [1] MONOLITHIC INTEGRATION OF INAS PHOTODIODE AND GAAS-MESFET
    DOBBELAERE, W
    DERAEDT, W
    DEBOECK, J
    MERTENS, R
    BORGHS, G
    ELECTRONICS LETTERS, 1992, 28 (04) : 372 - 374
  • [2] Compact polarization-insensitive InGaAsP-InP 2x2 optical switch
    Agashe, SS
    Shiu, KT
    Forrest, SR
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (01) : 52 - 54
  • [3] Monolithic InGaAsP-InP tapered laser amplifier gate 2x2 switch matrix with gain
    Dorgeuille, F
    Mersali, B
    Feuillade, T
    Sainson, S
    Brandon, J
    Slempkes, S
    Carre, M
    ELECTRONICS LETTERS, 1996, 32 (07) : 686 - 688
  • [4] MONOLITHICALLY INTEGRATED 2X2 INGAASP/INP LASER-AMPLIFIER GATE SWITCH ARRAYS
    JANSON, M
    LUNDGREN, L
    MORNER, AC
    RASK, M
    STOLTZ, B
    GUSTAVSSON, M
    THYLEN, L
    ELECTRONICS LETTERS, 1992, 28 (08) : 776 - 778
  • [5] 2x2 InGaAsP/InP laser amplifier gate switch arrays using reactive ion etching
    Oh, KR
    Ahn, JH
    Kim, JS
    Lee, SW
    Kim, HM
    Pyun, KE
    Park, HM
    ELECTRONICS LETTERS, 1996, 32 (01) : 39 - 40
  • [6] A microfluidic 2x2 optical switch
    Campbell, K
    Groisman, A
    Levy, U
    Pang, L
    Mookherjea, S
    Psaltis, D
    Fainman, Y
    APPLIED PHYSICS LETTERS, 2004, 85 (25) : 6119 - 6121
  • [7] A microfluidic 2x2 optical switch
    Pang, L
    Levy, U
    Campbell, K
    Groisman, A
    Mookarjee, S
    Psaltis, D
    Fainman, Y
    2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 124 - 125
  • [8] INSERTION-LOSS-FREE 2X2 INGAASP/INP OPTICAL SWITCH FABRICATED USING BANDGAP ENERGY CONTROLLED SELECTIVE MOVPE
    HAMAMOTO, K
    KOMATSU, K
    ELECTRONICS LETTERS, 1995, 31 (20) : 1779 - 1781
  • [9] MONOLITHIC PROCESS FOR CO-INTEGRATION OF GAAS-MESFET AND SILICON CMOS DEVICES AND CIRCUITS
    SHICHIJO, H
    MATYI, R
    TADDIKEN, AH
    KAO, YC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 548 - 555
  • [10] PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS-MESFET PRE-AMPLIFIER
    KOLBAS, RM
    ABROKWAH, J
    CARNEY, JK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1611 - 1611
12345