STANDARD ENTHALPHIES OF FORMATION OF GALLIUM AND INDIUM SELENIDES (GA2SE3 AND IN2SE3)

被引：0
|
作者：
SHARIFOV, KA
AZIZOV, TK
机构：
来源：
RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY,USSR | 1967年 / 41卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：645 / &
相关论文
共 50 条
  • [1] Physicochemical Analysis of the FeSe–Ga2Se3–In2Se3 System
    F. M. Mamedov
    D. M. Babanly
    I. R. Amiraslanov
    D. B. Tagiev
    M. B. Babanly
    Russian Journal of Inorganic Chemistry, 2020, 65 : 1747 - 1755
  • [2] DETERMINATION OF STANDARD ENTHALPY OF FORMATION OF GA2SE3
    BURYLEV, BP
    INORGANIC MATERIALS, 1977, 13 (05) : 754 - 755
  • [3] Interface reconstruction in the Ga2Se3/GaAs(100) and In2Se3/InAs(100) nanoheterostructures
    N. N. Bezryadin
    G. I. Kotov
    S. V. Kuzubov
    Ya. A. Boldyreva
    B. L. Agapov
    Crystallography Reports, 2011, 56
  • [4] Interface reconstruction in the Ga2Se3/GaAs(100) and In2Se3/InAs(100) nanoheterostructures
    Bezryadin, N. N.
    Kotov, G. I.
    Kuzubov, S. V.
    Boldyreva, Ya A.
    Agapov, B. L.
    CRYSTALLOGRAPHY REPORTS, 2011, 56 (03) : 526 - 530
  • [5] Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions
    Li, Peipei
    Kong, Delin
    Yang, Jin
    Cui, Shuyu
    Chen, Qi
    Liu, Yue
    He, Ziheng
    Liu, Feng
    Xu, Yingying
    Wei, Huiyun
    Zheng, Xinhe
    Peng, Mingzeng
    NANOMATERIALS, 2025, 15 (03)
  • [6] EVAPORATION OF GA2SE3
    BENDRIKH, NF
    PASHINKIN, AS
    INORGANIC MATERIALS, 1979, 15 (03) : 326 - 329
  • [7] HIGHER INDIUM SELENIDES IN2SE3, IN5SE7 AND IN6SE7
    LIKFORMAN, A
    MESSIN, D
    GUITTARD, M
    FLAHAUT, J
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE C, 1972, 274 (04): : 378 - +
  • [8] New forms of In2Se3 and Ga2Se3 prepared by reacting InAs and GaAs substrates with selenium
    A. V. Budanov
    E. A. Tatokhin
    V. D. Strygin
    E. V. Rudnev
    Inorganic Materials, 2009, 45 : 1087 - 1091
  • [9] New Forms of In2Se3 and Ga2Se3 Prepared by Reacting InAs and GaAs Substrates with Selenium
    Budanov, A. V.
    Tatokhin, E. A.
    Strygin, V. D.
    Rudnev, E. V.
    INORGANIC MATERIALS, 2009, 45 (10) : 1087 - 1091
  • [10] Optical properties of Ga2Se3 and Ga2Se3:Co2+ single crystals
    Yoon, CS
    Park, KH
    Kim, DT
    Park, TY
    Jin, MS
    Oh, SK
    Kim, WT
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2001, 62 (06) : 1131 - 1137
12345