FORMATION AND PROPERTIES OF (AU, AL, AG, IN) (INP-GAAS) SCHOTTKY DIODES - CONTRIBUTION OF THE SEMICONDUCTOR SURFACE TO THE DIODE CHARACTERISTICS

被引：15
|
作者：
LASSABATERE, L
ISMAIL, A
PALAU, JM
BENBRAHIM, A
机构：
来源：
SURFACE SCIENCE | 1986年 / 168卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(86)90863-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：336 / 346
页数：11
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