EFFECT OF SURFACE PROPERTIES ON N-TYPE GAAS-NI AND GAAS-AL SCHOTTKY DIODES

被引：4
|
作者：
PATWARI, AM [1 ]
HARTNAGEL, HL [1 ]
机构：
[1] UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,MERZ LABS,NEWCASTLE UPON TYNE,ENGLAND
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 02期
关键词：
D O I：
10.1002/pssa.2210260209
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：469 / 475
页数：7
相关论文
共 50 条
  • [1] Electrical characteristics of Al/n-type GaAs Schottky barrier diodes at room temperature
    Asimov, A.
    Ahmetoglu, M.
    Kucur, B.
    Gucuyener, I.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (3-4): : 306 - 310
  • [2] Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes
    Dogan, H.
    Korkut, H.
    Yildirim, N.
    Turut, A.
    APPLIED SURFACE SCIENCE, 2007, 253 (18) : 7467 - 7470
  • [3] Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes
    Karatas, S
    Altindal, S
    SOLID-STATE ELECTRONICS, 2005, 49 (06) : 1052 - 1054
  • [4] PROPERTIES OF WSIX-SCHOTTKY DIODES ON N-TYPE GAAS SPUTTERED UNDER UHV BACKGROUND CONDITIONS
    PLETSCHEN, W
    KAUFEL, G
    MAIER, M
    OLANDER, E
    WIEGERT, J
    BACHEM, KH
    RUPPRECHT, HS
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 619 - 624
  • [5] 1/f Noise in Ti-Au/n-Type GaAs Schottky Barrier Diodes
    Klyuev, Alexey V.
    Yakimov, Arkady V.
    Zhukova, Irene S.
    FLUCTUATION AND NOISE LETTERS, 2015, 14 (03):
  • [6] THE EFFECT OF SURFACE PREPARATION AND PROPERTIES ON AG-GAAS (100) SCHOTTKY DIODES
    ISMAIL, A
    PALAU, JM
    LASSABATERE, L
    SURFACE SCIENCE, 1986, 168 (1-3) : 386 - 394
  • [7] NERNST EFFECT IN N-TYPE GAAS
    CARLSON, RO
    EHRENREICH, H
    SILVERMAN, SJ
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 422 - &
  • [8] SCHOTTKY-BARRIER ENHANCEMENT ON N-TYPE GAAS BY AS IMPLANTATION
    WU, CS
    PAI, CS
    PEARTON, SJ
    REN, F
    LANE, E
    SCHLEICH, DM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 117 (02): : K107 - K110
  • [9] On the electrical characteristics of Au/n-type GaAs Schottky diode
    Mamor, M.
    Bouziane, K.
    Tirbiyine, A.
    Alhamrashdi, H.
    SUPERLATTICES AND MICROSTRUCTURES, 2014, 72 : 344 - 351
  • [10] Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n(+)GaAs Schottky diodes
    Arifin, P
    Tansley, TL
    Goldys, EM
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 345 - 348
12345