INFLUENCE OF OXIDE-ELECTROLYTE INTERFACE CONDITIONS AND OF FORMATION RATE ON PROPERTIES OF ANODIC ZIRCONIUM-OXIDES

被引：0
|
作者：
ORTEGA, C [1 ]
SIEJKA, J [1 ]
机构：
[1] ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75005 PARIS,FRANCE
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C133 / C133
页数：1
相关论文
共 43 条
  • [31] Influence of the conditions of manufacture of nanomeric zirconium dioxide, stabilized with yttrium oxide, on its catalytic properties in the oxidation of CO
    Kosmambetova G.R.
    Strizhak P.E.
    Moroz É.M.
    Konstantinova T.E.
    Gural'Skii A.V.
    Kol'Ko V.P.
    Gritsenko V.I.
    Danilenko I.A.
    Gorban O.A.
    Theoretical and Experimental Chemistry, 2007, 43 (2) : 102 - 107
  • [32] Growth of anodic oxides on Si(100) in 0.1M HCl: Influence of the initial electrochemical potential on the growth mechanism and properties of the oxide
    Bardwell, JA
    Allegretto, EM
    Phillips, J
    Buchanan, M
    Draper, N
    PROCEEDINGS OF THE SYMPOSIUM ON SURFACE OXIDE FILMS, 1996, 96 (18): : 120 - 130
  • [33] INFLUENCE OF GROWTH RATE OF OXIDE FILMS ON FORMATION OF THE ZONE OF A SOLID SOLUTION OF OXYGEN DURING OXIDATION OF ZIRCONIUM AND ITS ALLOYS.
    Perekhozhev, V.I.
    Kozlov, A.V.
    Vinogradov, V.I.
    Protection of Metals (English translation of Zaschita Metallov), 1981, 17 (01): : 51 - 55
  • [34] Influence of a 5 A tantalum nitride interface layer on dielectric properties of zirconium-doped tantalum oxide high-k films
    Tewg, JY
    Kuo, Y
    Lu, J
    Schueler, BW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (08) : G617 - G622
  • [35] INFLUENCE OF GROWTH-RATE OF OXIDE-FILMS ON FORMATION OF THE ZONE OF A SOLID-SOLUTION OF OXYGEN DURING OXIDATION OF ZIRCONIUM AND ITS ALLOYS
    PEREKHOZHEV, VI
    KOZLOV, AV
    VINOGRADOV, VI
    PROTECTION OF METALS, 1981, 17 (01): : 51 - 55
  • [36] INFLUENCE OF ANODIC POLARIZATION CONDITIONS UNDER STEADY ILLUMINATION ON THE FORMATION AND PROPERTIES OF POROUS SURFACE LAYERS ON n-TYPE SILICON.
    Izidinov, S.O.
    Blokhina, A.P.
    Martynova, T.S.
    Soviet electrochemistry, 1987, 22 (08): : 986 - 992
  • [37] INFLUENCE OF ANODIC POLARIZATION CONDITIONS UNDER STEADY ILLUMINATION ON THE FORMATION AND PROPERTIES OF POROUS SURFACE-LAYERS ON N-TYPE SILICON
    IZIDINOV, SO
    BLOKHINA, AP
    MARTYNOVA, TS
    SOVIET ELECTROCHEMISTRY, 1986, 22 (08): : 986 - 992
  • [38] Influence of a graphene oxide additive and the conditions of membrane formation on the morphology and separative properties of poly(vinylidene fluoride) membranes
    Fryczkowska, Beata
    Sieradzka, Marta
    Sarna, Ewa
    Fryczkowski, Ryszard
    Janicki, Jaroslaw
    JOURNAL OF APPLIED POLYMER SCIENCE, 2015, 132 (46)
  • [39] INFLUENCE OF POLYSILICON GATE FORMATION CONDITIONS ON THIN GATE OXIDE (4-6 NM) DIELECTRIC AND CHARGING PROPERTIES
    ITSUMI, M
    SHIONO, N
    SHIMAYA, M
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) : 7515 - 7519
  • [40] Influence of the synthesis conditions on the crystal structure and properties of GdBaCo2-xFexO5+δ oxides as air-electrodes for intermediate temperature solid oxide fuel cells
    Munoz-Gil, Daniel
    Perez-Coll, Domingo
    Urones-Garrote, Esteban
    Amador, Ulises
    Garcia-Martin, Susana
    JOURNAL OF MATERIALS CHEMISTRY A, 2017, 5 (24) : 12550 - 12556
12345