INDIUM INCORPORATION IN GAINAS/GAAS QUANTUM-WELLS GROWN ON GAAS

We report RHEED studies on the growth of GaInAs on GaAs over a range of, growth conditions. Above about 550-degrees-C there is a steady fall in In incorporation and a temperature-dependent reconstruction change from an As stable 2 x 4 to an In stable 4 x 2. Recovery time data indicate that the In surface concentration is highest at 560-degrees-C and decreases at higher temperatures due to increasing re-evaporation rate. An upturn in recovery time at longer deposition times and lower temperatures may be due to strain limited incorporation. Compositional homogeneity of GaInAs/GaAs quantum wells grown with full and partial In incorporation show marked differences which are discussed in relation to the above results.