ELECTRICAL-PROPERTIES OF JUNCTIONS BETWEEN GE FILMS AND MONO-CRYSTALLINE SILICON

被引：5
|
作者：
TOVE, PA
ALI, MP
IBRAHIM, MM
NORDE, H
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 02期
关键词：
D O I：
10.1002/pssa.2210510222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：491 / 496
页数：6
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