A HIGH-TC SUPERCONDUCTING THIN-FILM SWITCH CONTROLLED BY A FIELD-EMITTED ELECTRON-BEAM

被引:0
|
作者
SHKURATOV, SI
机构
[1] Institute of Electrophysics, Urals Division, Russian Academy of Sciences, Ekaterinburg, 620219, 34 Komsomolskaya Street
关键词
D O I
10.1088/0022-3727/27/2/029
中图分类号
O59 [应用物理学];
学科分类号
摘要
A design variant of a high-temperature superconducting thin-film switching device controlled by a field-emitted electron beam is proposed. Numerical simulation shows that the superconducting-to-normal state transition time in such a device will be about several hundred picoseconds. Results of analysis of the dynamics of heating and switching of high-temperature superconducting thin film from superconducting to normal state under the action of a surface pulsed energy flow are presented.
引用
收藏
页码:376 / 378
页数:3
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