ELECTRICAL-PROPERTIES OF THIN OXYNITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT

被引：10
|
作者：
FUKUDA, H
YASUDA, M
OHNO, S
机构：
[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., Hachioji, Tokyo 193
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 05期
关键词：
THIN FILMS; METAL-OXIDE-SEMICONDUCTOR STRUCTURES; ANNEALING;
D O I：
10.1049/el:19910278
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optimisation of reaction temperature and time has been made in the oxynitridation of SiO2 in N2O by evaluating its dielectric properties at a constant current stress. It is found that N2O-oxynitrided SiO2 films are much improved in both charge trapping density and charge to breakdown when the optimum oxynitridation process (O2, 1100-degrees-C, 5 s and following N2O, 1200-degrees-C, 25 s) is chosen.
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页码：440 / 441
页数：2
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