MODELING OF A DEPLETION-MODE MOSFET

被引：6
|
作者：
PARIKH, CD
VASI, J
机构：
[1] Indian Inst of Technology, Bombay, India, Indian Inst of Technology, Bombay, India
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 07期
关键词：
D O I：
10.1016/0038-1101(87)90107-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new depletion-mode MOSFET model is derived which includes the effects of the diffusion current along the channel and the actual band-bending at the semiconductor surface. Because of the latter, a single drain current equation is obtained for the device operating in the linear region, irrespective of whether the channel surface is in accumulation or depletion. A separate equation for the diffusion current is derived. Numerical results indicate that diffusion current is not significant in the linear regime of operation and, by extrapolation, in saturation.
引用
收藏
页码：699 / 703
页数：5
相关论文
共 50 条
  • [1] MODELING OF A DEPLETION-MODE MOSFET - COMMENT
    TURCHEITTI, C
    MASETTI, G
    SOLID-STATE ELECTRONICS, 1988, 31 (12) : 1747 - 1748
  • [2] MODELING OF A DEPLETION-MODE MOSFET - RESPONSE
    PARIKH, CD
    VASI, J
    SOLID-STATE ELECTRONICS, 1988, 31 (12) : 1749 - 1749
  • [3] Potential-Based Modeling of Depletion-Mode MOSFET Applicable for Structural Variations
    Iizuka, Takahiro
    Umeda, Takuya
    Hirano, Yoko
    Kikuchihara, Hideyuki
    Miura-Mattausch, Mitiko
    Feldmann, Uwe
    Navarro, Dondee
    Molnar, Kund
    Posch, Werner
    Yonamine, Takashige
    Kishigami, Hirofumi
    Hashigami, Hiroyuki
    Mattausch, Hans Jurgen
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (01) : 52 - 59
  • [4] A Novel Current-Mode Boost Converter with Depletion-Mode MOSFET
    Cheng, Pengming
    Zhang, Bo
    Qiao, Ming
    2009 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLUMES I & II: COMMUNICATIONS, NETWORKS AND SIGNAL PROCESSING, VOL I/ELECTRONIC DEVICES, CIRUITS AND SYSTEMS, VOL II, 2009, : 716 - 719
  • [5] Depletion-mode kick-starts MOSFET power supply
    Mirsky, Gregory
    EDN, 2008, 53 (01) : 68 - 68
  • [6] ANALYSIS OF THE DEPLETION-MODE MOSFET INCLUDING DIFFUSION AND DRIFT CURRENTS
    TURCHETTI, C
    MASETTI, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 773 - 782
  • [7] ANALYTICAL MODELING OF DEPLETION-MODE MOSFET WITH SHORT-CHANNEL AND NARROW-CHANNEL EFFECTS
    BALLAY, N
    BAYLAC, B
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (06): : 225 - 238
  • [8] DEPLETION-MODE MOS CAPACITOR MODELING INVESTIGATION
    Tseng, Chien-Lung
    Wang, Yuan Sheng
    2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017), 2017,
  • [9] ANALYSIS OF THE DEPLETION-MODE MOSFET INCLUDING DIFFUSION AND DRIFT CURRENTS.
    Turchetti, Claudio
    Masetti, Guido
    IEEE Transactions on Electron Devices, 1985, ED-32 (04) : 773 - 782
  • [10] A depletion-mode InP MOSFET with a liquid phase oxidized InGaAs gate
    Kang, SJ
    Han, JC
    Kim, JH
    Jo, SJ
    Song, HJ
    Park, SW
    Song, JI
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 125 - 129
12345