HOT-ELECTRONS IN DELTA-DOPED GAAS(SI) LAYERS

被引：0

作者：

MENDONCA, CAC ^{[1
]}

SCOLFARO, LMR ^{[1
]}

PLENTZ, F ^{[1
]}

MENESES, EA ^{[1
]}

OLIVEIRA, AT ^{[1
]}

RODRIGUES, R ^{[1
]}

GUIMARAES, PSS ^{[1
]}

BEZERRA, JC ^{[1
]}

DIAS, IFL ^{[1
]}

OLIVEIRA, AG ^{[1
]}

机构：

[1] UNIV FED MINAS GERAIS,DEPT FIS,BR-30161 BELO HORIZONTE,MG,BRAZIL

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 09期

关键词：

D O I：

10.1016/0038-1098(90)90231-Y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) layers, with carrier sheet concentrations Ns ranging from 1012 to 1013cm-2. Under the same excitation intensity, the luminescence spectra of all samples show a high energy tail which becomes more pronounced as Ns increases. Well defined electron temperatures, higher than the lattice temperature, are obtained, characterizing the electron heating effect in this system. The architecture of the delta-doping allows to observe hot electrons even at relatively low laser pumping intensities. © 1990.

引用

页码：707 / 710

页数：4

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