HIGH-TEMPERATURE PHOTOCHEMICAL HOLE BURNING AND LASER-INDUCED HOLE FILLING IN DYE-DOPED POLYMER SYSTEMS

被引:46
|
作者
FURUSAWA, A [1 ]
HORIE, K [1 ]
机构
[1] UNIV TOKYO,FAC ENGN,DEPT REACT CHEM,BUNKYO KU,TOKYO 113,JAPAN
来源
JOURNAL OF CHEMICAL PHYSICS | 1991年 / 94卷 / 01期
关键词
D O I
10.1063/1.460301
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-temperature photochemical hole burning (PHB) and laser-induced hole filling were studied for dye-doped polymer systems focusing on the capability of hole formation at 80 K. Hole area of a hole burnt at 4.2 K was almost conserved after cycle annealing up to 80 K irrespective of the capability of hole formation at 80 K. The extent of spectral diffusion also hardly affected this capability. Furthermore, it was not suggested to be the homogeneous width alone that affects the capability of hole formation at 80 K. Important factor for hole formation at 80 K is elucidated to be the suppression of the laser-induced hole filling at 80 K.
引用
收藏
页码:80 / 85
页数:6
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