CYCLOTRON RESONANCE OF DOPED SILICON

被引：39
|
作者：
OTSUKA, E
OHYAMA, T
MURASE, K
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1968年 / 25卷 / 03期
关键词：
D O I：
10.1143/JPSJ.25.729
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：729 / &
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