SURFACE PREPARATION TO OBTAIN GOOD I-V CHARACTERISTICS ON GERMANIUM LITHIUM DIODES

被引：4
|
作者：
DEWIT, RC
MCKENZIE, JM
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1968年 / NS15卷 / 03期
关键词：
D O I：
10.1109/TNS.1968.4324958
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：352 / &
相关论文
共 50 条
  • [21] Temperature-dependent I-V characteristics of organic-inorganic heterojunction diodes
    Ahmed, MM
    Karimov, KS
    Moiz, SA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (01) : 121 - 126
  • [22] Analysis of the I-V characteristics of Al/4H-SiC Schottky diodes
    Zhang, JY
    Harrell, WR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (02): : 872 - 878
  • [23] Computer Statistical Experiment for Analysis of Resonant-Tunneling Diodes I-V Characteristics
    Cherkasov, Kirill
    Meshkov, Sergey
    Makeev, Mstislav
    Ivanov, Yury
    Shashurin, Vasily
    Tsvetkov, Yury
    Khlopov, Boris
    INTERNATIONAL SCIENTIFIC CONFERENCE ENERGY MANAGEMENT OF MUNICIPAL FACILITIES AND SUSTAINABLE ENERGY TECHNOLOGIES EMMFT 2018, VOL 2, 2019, 983 : 626 - 634
  • [24] Effect of temperature and electron irradiation on the I-V characteristics of Au/CdTe Schottky diodes
    Pattabi, Manjunatha
    Krishnan, Sheeja
    Ganesh
    Mathew, X.
    SOLAR ENERGY, 2007, 81 (01) : 111 - 116
  • [25] I-V characteristics of polycrystalline silicon diodes and the energy distribution of traps in grain boundaries
    Yamamoto, Ichiro
    Takeda, Ryo
    Suzuki, Yoshihisa
    Kuwano, Hiroshi
    Saito, Yoji
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1992, 75 (07): : 51 - 59
  • [26] Analysis of I-V Characteristics of Si Diodes Irradiated with Short-Range Ions
    Eremin, V. K.
    Fadeeva, N. N.
    Mitina, D. D.
    Verbitskaya, E. M.
    SEMICONDUCTORS, 2023, 57 (12) : 531 - 538
  • [27] TEMPERATURE-DEPENDENCE OF I-V AND C-V CHARACTERISTICS OF AL/CDTE SCHOTTKY DIODES
    NABY, MA
    RENEWABLE ENERGY, 1995, 6 (5-6) : 567 - 572
  • [28] Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes
    Morrison, DJ
    Hilton, KP
    Uren, MJ
    Wright, NG
    Johnson, CM
    O'Neill, AG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 345 - 348
  • [29] A practical theoretical model for Ge-like epitaxial diodes: I. The I-V characteristics
    Mircovich, Matthew A.
    Kouvetakis, John
    Menendez, Jose
    JOURNAL OF APPLIED PHYSICS, 2024, 135 (12)
  • [30] SURFACE POTENTIAL MEASUREMENTS OF LITHIUM DRIFTED GERMANIUM DIODES
    DAVIES, DE
    WEBB, PP
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (01) : 78 - +
12345