DEPLETION LAYER FORMATION, SPACE-CHARGE INJECTION AND CURRENT-VOLTAGE CHARACTERISTICS FOR SILICON P-N-P- (N-P-N) STRUCTURE

被引：1

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作者：

WRIGHT, GT

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 04期

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D O I：

10.1016/0038-1101(72)90108-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：381 / &

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