CHEMICAL VAPOR-DEPOSITION OF ALUMINUM SILICATE THIN-FILMS

被引：25
|
作者：
APBLETT, AW
CHEATHAM, LK
BARRON, AR
机构：
[1] HARVARD UNIV,DEPT CHEM,CAMBRIDGE,MA 02138
[2] HARVARD UNIV,MAT RES LAB,CAMBRIDGE,MA 02138
来源：
JOURNAL OF MATERIALS CHEMISTRY | 1991年 / 1卷 / 01期
关键词：
ALUMINUM SILICATE; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILM;
D O I：
10.1039/jm9910100143
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Aluminium silicate (Al2O3)x(SiO2)y, thin films have been grown by atmospheric pressure metal-organic vapour deposition using the volatile metal organic precursor [Al(OSiEt3)3]2. As determined by X-ray photoelectron spectroscopy, the deposited films consisted of a mixture of Al2O3, SiO2, and an aluminosilicate.
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页码：143 / 144
页数：2
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