SEMICONDUCTOR-FERROELECTRIC NON-VOLATILE MEMORY USING ANOMALOUS HIGH PHOTOVOLTAGES IN FERROELECTRIC CERAMICS

被引：18
|
作者：
BRODY, PS
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 03期
关键词：
D O I：
10.1063/1.92283
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：153 / 155
页数：3
相关论文
共 50 条
  • [1] ANALYSIS OF NON-VOLATILE POLARIZED MEMORY OF SEMICONDUCTOR-FERROELECTRIC HETEROSTRUCTURE JUNCTION
    OKUYAMA, M
    YOKOYAMA, K
    HAMAKAWA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (06) : 1111 - 1115
  • [2] SEMICONDUCTOR-FERROELECTRIC MEMORY DEVICE
    SAWYER, DE
    SANDSTROM, DB
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (01): : 87 - +
  • [3] High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes
    Khan, M. A.
    Bhansali, Unnat S.
    Alshareef, H. N.
    [J]. ADVANCED MATERIALS, 2012, 24 (16) : 2165 - 2170
  • [4] Retention Analysis of a Non-Volatile Ferroelectric Memory Device
    John, Caroline S.
    Macleod, Todd C.
    Evans, Joe
    Ho, Fat D.
    [J]. INTEGRATED FERROELECTRICS, 2012, 140 : 23 - 34
  • [5] A ferroelectric fin diode for robust non-volatile memory
    Guangdi Feng
    Qiuxiang Zhu
    Xuefeng Liu
    Luqiu Chen
    Xiaoming Zhao
    Jianquan Liu
    Shaobing Xiong
    Kexiang Shan
    Zhenzhong Yang
    Qinye Bao
    Fangyu Yue
    Hui Peng
    Rong Huang
    Xiaodong Tang
    Jie Jiang
    Wei Tang
    Xiaojun Guo
    Jianlu Wang
    Anquan Jiang
    Brahim Dkhil
    Bobo Tian
    Junhao Chu
    Chungang Duan
    [J]. Nature Communications, 15
  • [6] Non-volatile memory based on the ferroelectric photovoltaic effect
    Guo, Rui
    You, Lu
    Zhou, Yang
    Lim, Zhi Shiuh
    Zou, Xi
    Chen, Lang
    Ramesh, R.
    Wang, Junling
    [J]. NATURE COMMUNICATIONS, 2013, 4
  • [7] Ferroelectric polymers for non-volatile memory devices: a review
    Li, Huilin
    Wang, Ruopeng
    Han, Su-Ting
    Zhou, Ye
    [J]. POLYMER INTERNATIONAL, 2020, 69 (06) : 533 - 544
  • [8] Overview: Ferroelectric non-volatile memory research at NEC
    Abe, H
    Endo, N
    Watanabe, H
    [J]. NEC RESEARCH & DEVELOPMENT, 1999, 40 (02): : 203 - 205
  • [9] A ferroelectric fin diode for robust non-volatile memory
    Feng, Guangdi
    Zhu, Qiuxiang
    Liu, Xuefeng
    Chen, Luqiu
    Zhao, Xiaoming
    Liu, Jianquan
    Xiong, Shaobing
    Shan, Kexiang
    Yang, Zhenzhong
    Bao, Qinye
    Yue, Fangyu
    Peng, Hui
    Huang, Rong
    Tang, Xiaodong
    Jiang, Jie
    Tang, Wei
    Guo, Xiaojun
    Wang, Jianlu
    Jiang, Anquan
    Dkhil, Brahim
    Tian, Bobo
    Chu, Junhao
    Duan, Chungang
    [J]. NATURE COMMUNICATIONS, 2024, 15 (01)
  • [10] Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch
    John, Caroline S.
    MacLeod, Todd C.
    Evans, Joe
    Ho, Fat D.
    [J]. INTEGRATED FERROELECTRICS, 2012, 132 : 76 - 81
12345