HETEROEPITAXIAL SI/AL2O3/SI STRUCTURES

被引:44
|
作者
ISHIDA, M [1 ]
SAWADA, K [1 ]
YAMAGUCHI, S [1 ]
NAKAMURA, T [1 ]
SUZAKI, T [1 ]
机构
[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
关键词
D O I
10.1063/1.102434
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:556 / 558
页数:3
相关论文
共 50 条
  • [31] Fabrication and mechanical properties of α-Al2O3/β-Al2O3/Al/Si composites by liquid displacement reaction
    T. Watari
    T. Torikai
    W.-P. Tai
    O. Matsuda
    Journal of Materials Science, 2000, 35 : 515 - 520
  • [32] Fabrication and mechanical properties of α-Al2O3/β-Al2O3/Al/Si composites by liquid displacement reaction
    Watari, T
    Torikai, T
    Tai, WP
    Matsuda, O
    JOURNAL OF MATERIALS SCIENCE, 2000, 35 (02) : 515 - 520
  • [33] On the nano-treating effect of Al2O3 on the eutectic Si in Al-Si alloy
    Li, Mengyu
    Gao, Tong
    Li, Chunxiao
    Sun, Yue
    Wu, Yuying
    Liu, Xiangfa
    MICRON, 2023, 168
  • [34] Photoluminescence study of hexagonal GaN heteroepitaxial layersgrown by molecular beam epitaxy on Al2O3, Si and GaAs substrates
    Pavelescu, EM
    Androulidaki, M
    Cengher, M
    Georgakilas, A
    Cimpoca, V
    2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 109 - 112
  • [35] Defect centers and thermoluminescence in Al2O3:Si,Ti
    Rao, T. K. Gundu
    Bhatt, B. C.
    Page, P. S.
    RADIATION MEASUREMENTS, 2008, 43 (2-6) : 295 - 299
  • [36] A study on Si/Al2O3 paramagnetic point defects
    Kuehnhold-Pospischil, S.
    Saint-Cast, P.
    Hofmann, M.
    Weber, S.
    Jakes, P.
    Eichel, R. -A.
    Granwehr, J.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (19)
  • [37] ELECTRON-BEAM EVAPORATED AL2O3 ON SI
    MUNRO, PC
    THOMPSON, HW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) : 127 - 132
  • [38] STRUCTURE OF SI/Al2O3 AND WAYS TO IMPROVE THEIR QUALITY
    Denisov, S. A.
    Shengurov, V. G.
    Svetlov, S. P.
    Chalkov, V. Y.
    MORDOVIA UNIVERSITY BULLETIN, 2007, 3 : 79 - 83
  • [39] NUCLEATION AND GROWTH OF AL2O3 ON SI IN THE CVD PROCESS
    CHOI, SW
    KIM, C
    KIM, JG
    CHUN, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C92 - C92
  • [40] In situ catalytic growth of Al2O3 and Si nanowires
    Tang, CC
    Fan, SS
    Li, P
    de la Chapelle, ML
    Dang, HY
    JOURNAL OF CRYSTAL GROWTH, 2001, 224 (1-2) : 117 - 121