OPTICAL NONLINEARITIES IN N-I-P-I AND HETERO-N-I-P-I STRUCTURES

被引:7
|
作者
MALZER, S [1 ]
LINDER, N [1 ]
GULDEN, KH [1 ]
HOFLER, A [1 ]
KIESEL, P [1 ]
KNEISSL, M [1 ]
WU, X [1 ]
SMITH, JS [1 ]
DOHLER, GH [1 ]
机构
[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 173卷 / 01期
关键词
D O I
10.1002/pssb.2221730146
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Optical nonlinearities in n-i-p-i and hetero-n-i-p-i structures with selective ohmic contacts, are reported. In this kind of structures strong changes of the absorption and refractive index are achieved either by field effects and/or with phase space filling. The latter one is always present in normal n-i-p-i structures but relatively weak because of the 3D character of the DOS. In QW structures this effect is much more pronounced because of the reduced real and momentum space and the enhanced excitonic oscillator strength. First the dynamics of n-i-p-i structures is discussed and then first experimental results of electrically tuned absorption changes due to band filling are shown. Field effects are also known to give large transmission changes. In particular, results for the transmission modulation in a n-i-p-i structure with a contrast ratio 2 are shown. It is also demonstrated that fast switching can be achieved in n-i-p-i structures. In a device with a 32 mum distance between the n- and p-contacts. a 3 dB frequency of 16 MHz is obtained in excellent agreement with the theoretical prediction. By scaling down the structure to 3 mum frequencies in the GHz range are expected to be feasible.
引用
收藏
页码:459 / 472
页数:14
相关论文
共 50 条
  • [31] Nonlinearities in the reflection and transmission spectra of the photonic bandgap heterostructures with n-i-p-i crystals
    Ushakov, D. V.
    Kononenko, V. K.
    Marciniak, M.
    OPTICAL AND QUANTUM ELECTRONICS, 2007, 39 (4-6) : 491 - 499
  • [33] PHOTOLUMINESCENCE OF A NOVEL HETERO N-I-P-I STRUCTURE INCORPORATING TRIPLE QUANTUM WELLS
    TOKUDA, Y
    KANAMOTO, K
    TSUKADA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (05): : L747 - L749
  • [34] CALCULATION OF OPTICAL-ABSORPTION ASSOCIATED WITH INDIRECT TRANSITIONS IN SILICON N-I-P-I STRUCTURES
    DESTERKE, CM
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3187 - 3192
  • [35] MAGNETOPLASMON POLARITONS IN FINITE N-I-P-I SUPERLATTICES
    ALBUQUERQUE, EL
    FULCO, P
    FARIAS, GA
    AUTO, MM
    TILLEY, DR
    PHYSICAL REVIEW B, 1991, 43 (03): : 2032 - 2041
  • [36] Dilute nitride n-i-p-i solar cells
    Royall, B.
    Balkan, N.
    MICROELECTRONICS JOURNAL, 2009, 40 (03) : 396 - 398
  • [37] Carrier transport and screening in n-i-p-i crystals
    Kononenko, VK
    Ushakov, DV
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 211 (02): : 743 - 749
  • [38] Electronic structure of n-i-p-i Si superlattices
    Di Ventra, M
    Grosso, G
    Parravicini, GP
    Piermarocchi, C
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (50) : L657 - L661
  • [39] THE PHYSICS AND APPLICATIONS OF N-I-P-I DOPING SUPERLATTICES
    DOHLER, GH
    CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1987, 13 (02): : 97 - 141
  • [40] CONSTRUCTIVE SUPERPOSITION OF FIELD-INDUCED AND CARRIER-INDUCED ABSORPTION CHANGES IN HETERO-N-I-P-I STRUCTURES
    KNEISSL, M
    GULDEN, KH
    KIESEL, P
    LACZAK, A
    MALZER, S
    DOHLER, GH
    WU, X
    SMITH, JS
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 1251 - 1253