EFFECT OF A FUNNEL-SHAPED RADIATION SHIELD ON THE CHARACTERISTICS OF A SILICON CZ FURNACE

被引：2
|
作者：
HONDA, K
IMAISHI, N
TSUKADA, T
HOZAWA, M
机构：
[1] KYUSHU UNIV,INST ADV MAT STUDY,KASUGA,FUKUOKA 816,JAPAN
[2] TOHOKU UNIV,INST CHEM REACT SCI,SENDAI,MIYAGI 980,JAPAN
来源：
JOURNAL OF CHEMICAL ENGINEERING OF JAPAN | 1992年 / 25卷 / 01期
关键词：
CRYSTAL GROWTH; SILICON; SINGLE CRYSTAL; RADIATION HEAT TRANSFER; THERMAL STRESS; FINITE ELEMENT ANALYSIS; CZOCHRALSKI METHOD;
D O I：
10.1252/jcej.25.84
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
For the 6" silicon CZ system, effects of a funnel-shaped radiation shield on the temperature profiles in the melt and crystal, the melt/crystal interface shape and also the distribution of the thermal stresses were investigated theoretically by the finite element analysis based on the conduction-dominated model. It is found that a funnel-shaped radiation shield can make the melt/crystal interface less convex to the crystal (relatively flatter), providing a higher pull rate and smaller thermal stresses in the crystal compared with other radiation shield geometries, such as a doughnut (torus) shape. Also, the principal operating conditions in the CZ system, such as the crucible temperature, can be changed widely by selecting the emissivity and/or thickness of the shield.
引用
收藏
页码：84 / 89
页数：6
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