GAAS GROWTH USING TERTIARYBUTYLARSINE AND TRIMETHYLGALLIUM

被引：50
|
作者：
LARSEN, CA [1 ]
BUCHAN, NI [1 ]
LI, SH [1 ]
STRINGFELLOW, GB [1 ]
机构：
[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期
关键词：
This work was supportedb y a grant from the US Air Force; C ontracNt o. AFOSR-87-0233T. he authorsw ish to thank AmericanC yanamidC om-pany for supplyingth e tertiarybutylarsine;
D O I：
10.1016/0022-0248(88)90499-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
11
引用
收藏
页码：15 / 19
页数：5
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