共 50 条
- [41] ION-IMPLANTATION DOPING OF EVAPORATED AMORPHOUS-SILICON FILMS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (08): : 888 - 891
- [42] A NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH A CONTROLLABLE GATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (4A): : L497 - L499
- [45] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON MULTILAYERS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 160 (02): : K103 - K107
- [46] N-TYPE DOPING OF AMORPHOUS-SILICON USING TERTIARYBUTYLPHOSPHINE [J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2121 - 2123
- [49] DOPING GLOW-DISCHARGE AMORPHOUS-SILICON BY METAL COEVAPORATION [J]. CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) : 1027 - 1029