MECHANISM FOR THE NANOMETER-SCALE MODIFICATION ON HOPG SURFACE BY SCANNING TUNNELING MICROSCOPE

被引：9
|
作者：
WANG, ZH
DAI, CC
ZHANG, PC
HUANG, GZ
LI, RL
GUO, Y
BAI, CL
机构：
[1] Institute of Chemistry, Academia Sinica, Beijing
来源：
CHINESE PHYSICS LETTERS | 1993年 / 10卷 / 09期
关键词：
D O I：
10.1088/0256-307X/10/9/007
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A technique applying voltage across the tunnel junction for writing permanent features on graphite with lines about 10 nm width using our home-built scanning tunneling microscope has been presented. Multiple-tip effects while modifying the surface are often met. The phenomena are explained in terms of the strong electric field existing at the junctions between the tip and the surface. In addition, the shape of the structure indented by the tip is in agreement with that of the tip.
引用
收藏
页码：535 / 538
页数：4
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