PERSISTENT PHOTOCONDUCTIVITY IN A-SI1-XSX-H AT LOW-SULFUR CONCENTRATION

被引：0
|
作者：
WANG, SL
VINER, JM
ANANI, M
TAYLOR, PC
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷
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中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present the observation in homogeneous, unlayered a-Si1-xSx:H alloys of a light-induced increase of the dark conductivity which is similar to that found in compensated and doping-modulated a-Si:H. This effect occurs for small sulfur concentrations. The excess conductivity can be annealed at about 200 degrees C independent of the hydrogen concentration in the films.
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页码：251 / 254
页数：4
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