PERSISTENT PHOTOCONDUCTIVITY IN UNDOPED A-SI-H/A-SIC-H MULTILAYERS

被引：1
|
作者：
BERTOMEU, J
PUIGDOLLERS, J
ASENSI, JM
ANDREU, J
DELGADO, JC
机构：
[1] Universitat de Barcelona, Departament de Física Aplicada i Electrònica, E-08028 Barcelona
来源：
THIN SOLID FILMS | 1993年 / 228卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(93)90589-H
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Persistent photoconductivity (PPC) was observed in a-Si:H/a-Si1-xCx:H (hydrogenated amorphous silicon and hydrogenated amorphous silicon-carbon alloys) multilayers. The influence of bilayer thickness, band gap, wavelength of the light, duration of illumination and temperature on this phenomenon was studied. PPC and photoconductivity increase when the layer thickness increases, which has been attributed to interface recombination. PPC also increases when the carbon content of a-Si1-xCx:H increases. PPC for samples with low carbon content exhibits a decrease vs. illumination time attributed to the light-induced created defects. The temperature dependence of PPC presents an activated behaviour.
引用
收藏
页码：165 / 168
页数：4
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