CHARGE-TRANSPORT ALONG AND ACROSS A-SI-H/A-SIC-H MULTILAYERS

被引:0
|
作者
ARLAUSKAS, K [1 ]
JUSKA, G [1 ]
SCHWARZ, R [1 ]
FISCHER, T [1 ]
机构
[1] TECH UNIV MUNICH,D-85747 GARCHING,GERMANY
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中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper small charge collection as well as drift mobility studies in multilayers for high and low barriers are presented for carrier drift both along and across the layers. The total collection of photogenerated electrons was measured at extremely high electric fields for both low and thick (30 nm) and high and thin barriers (1-2 nm). The electron drift time has been measured by the time-of-flight technique. The transport nature is considered to be field-stimulated thermal activation for low barriers and tunnelling for thin barriers.
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页码:873 / 876
页数:4
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