EFFECTS OF AVALANCHE INJECTION OF ELECTRONS INTO SILICON DIOXIDE - GENERATION OF FAST AND SLOW INTERFACE STATES

被引：135

|

作者：

LAI, SK

YOUNG, DR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.328565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6231 / 6240

页数：10

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