EFFECTS OF OXYGEN PARTIAL PRESSURE ON THE OXIDATION OF SILICON CARBIDE

被引：40
|
作者：
JORGENSEN, PJ
WADSWORTH, ME
CUTLER, IB
机构：
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1960年 / 43卷 / 04期
关键词：
D O I：
10.1111/j.1151-2916.1960.tb12983.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：209 / 212
页数：4
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