EFFECT OF PRIMARY IONIZATION IN AMORPHOUS-SILICON DETECTORS

被引：17
|
作者：
EQUER, B [1 ]
KARAR, A [1 ]
机构：
[1] COLL FRANCE,INST NATL PHYS NUCL & PHYS PARTICULES,CNRS,PHYS CORPUSCULAIRE LAB,F-75231 PARIS 05,FRANCE
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1988年 / 271卷 / 03期
关键词：
D O I：
10.1016/0168-9002(88)90324-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：574 / 584
页数：11
相关论文
共 50 条
  • [21] HIGH-EFFICIENCY NEUTRON SENSITIVE AMORPHOUS-SILICON PIXEL DETECTORS
    MIRESHGHI, A
    CHO, G
    DREWERY, JS
    HONG, WS
    JING, T
    LEE, H
    KAPLAN, SN
    PEREZMENDEZ, V
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (04) : 915 - 921
  • [22] AMORPHOUS-SILICON EDGE DETECTORS FOR APPLICATION TO NEURAL NETWORK IMAGE SENSORS
    SAH, WJ
    LEE, SC
    TSAI, HK
    CHEN, JH
    APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2539 - 2541
  • [23] EFFECT OF THE DEPOSITION VARIABLES ON AMORPHOUS-SILICON STABILITY
    BUITRAGO, RH
    ARCE, RD
    KOROPECKI, RR
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 259 - 262
  • [24] AC FIELD-EFFECT IN AMORPHOUS-SILICON
    SRIVASTAVA, AK
    NARASIMHAN, KL
    BAPAT, DR
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 572 - 574
  • [25] PHOTOCORROSION OF HYDROGENATED AMORPHOUS-SILICON - EFFECT OF THE SOLVENT
    SAVADOGO, O
    YELON, A
    CANADIAN JOURNAL OF PHYSICS, 1989, 67 (10) : 980 - 983
  • [26] CONTROL OF PHOTODEGRADATION IN AMORPHOUS-SILICON - THE EFFECT OF DEUTERIUM
    GANGULY, G
    YAMASAKI, S
    MATSUDA, A
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01): : 281 - 292
  • [27] ELECTRON LOCALIZATION IN MODELS OF HYDROGENATED AMORPHOUS-SILICON AND PURE AMORPHOUS-SILICON
    HOLENDER, JM
    MORGAN, GJ
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1994, 2 (01) : 1 - 8
  • [28] THE SIGN OF THE HALL-EFFECT IN AMORPHOUS-SILICON
    MOTT, NF
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01): : 3 - 5
  • [29] THE EFFECT OF INTERFACE STATES ON AMORPHOUS-SILICON TRANSISTORS
    IBARAKI, N
    FUKUDA, K
    TAKATA, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) : 2971 - 2972
  • [30] INTERFERENCE PHOTOCONDUCTIVITY AND PHOTOELECTROMAGNETIC EFFECT IN AMORPHOUS-SILICON
    AUGELLI, V
    MURRI, R
    NOWAK, M
    PHYSICAL REVIEW B, 1989, 39 (12): : 8336 - 8346
12345