EFFECTS OF RADIATION-INDUCED DEEP LEVELS ON ADMITTANCE OF P+N DIODES UNDER FORWARD BIAS

被引：3
|
作者：
STRONG, PJ
HOWES, MJ
MORGAN, DV
机构：
[1] Dept. Electr. Electron. Engin., Univ. Leeds, United Kingdom
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1977年 / 34卷 / 04期
关键词：
D O I：
10.1080/00337577708233153
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
A simple equivalent circuit is presented which predicts the small-signal admittance-voltage characteristics of silicon p** plus n junction diodes under forward bias conditions. Deep levels are introduced into the diodes by irradiation with carbon ions or thermal neutrons, and the effects on these characteristics are discussed in terms of the equivalent circuit. The drastic changes observed in the C-V characteristic are attributed to enhanced carrier recombination resulting from the damage.
引用
收藏
页码：241 / 245
页数：5
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