LATERAL N-I-P-I SUPERLATTICES IN SI METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：1

作者：

HUBER, A ^{[1
]}

LORENZ, H ^{[1
]}

KOTTHAUS, JP ^{[1
]}

BAKKER, S ^{[1
]}

KLAPWIJK, TM ^{[1
]}

机构：

[1] UNIV GRONINGEN,DEPT APPL PHYS,9747 AG GRONINGEN,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.51.5028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A stacked-gate technique is used to realize a large lateral potential modulation in microstructured silicon metal-oxide-semiconductor samples, thus making possible the search for closely spaced alternating quasi-one-dimensional channels of electrons and holes. Far-infrared transmission spectra measured at liquid-helium temperature show, besides the well-known absorption in electron quantum wires, an additional signal due to one-dimensional hole channels. With appropriate gate voltages applied to the top and bottom gate the transition from a two-dimensional hole system and a two-dimensional electron system to a so-called lateral n-i-p-i superlattice is investigated in magnetic fields up to 15 T. © 1995 The American Physical Society.

引用

页码：5028 / 5032

页数：5

共 50 条

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