ULTRA-THIN LPCVD SILICON OXYNITRIDE DIELECTRICS FOR VLSI

被引：0
|
作者：
PAN, P [1 ]
ABERNATHEY, J [1 ]
GEISS, P [1 ]
机构：
[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C626 / C626
页数：1
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