CARRIER COOLING IN UNDOPED AND MODULATION-DOPED GA0.47IN0.53AS MULTIPLE QUANTUM-WELLS

被引:17
|
作者
LOBENTANZER, H
RUHLE, WW
POLLAND, HJ
STOLZ, W
PLOOG, K
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 05期
关键词
D O I
10.1103/PhysRevB.36.2954
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2954 / 2957
页数:4
相关论文
共 50 条
  • [21] Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells
    Lima, FMS
    Veloso, AB
    Fonseca, ALA
    Nunes, OAC
    da Silva, EF
    MICROELECTRONICS JOURNAL, 2005, 36 (11) : 1016 - 1019
  • [22] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    SCHUBERT, EF
    APPLIED PHYSICS LETTERS, 1986, 49 (04) : 220 - 222
  • [23] Electron effective mass and nonparabolicity in Ga0.47In0.53As/InP quantum wells
    Wetzel, C
    Winkler, R
    Drechsler, M
    Meyer, BK
    Rossler, U
    Scriba, J
    Kotthaus, JP
    Harle, V
    Scholz, F
    PHYSICAL REVIEW B, 1996, 53 (03): : 1038 - 1041
  • [24] BARRIER CONTROLLED HOT CARRIER COOLING IN IN0.53GA0.47AS/INP QUANTUM WELLS
    CEBULLA, U
    FORCHEL, A
    BACHER, G
    GRUTZMACHER, D
    TSANG, WT
    RAZEGHI, M
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1669 - 1673
  • [25] MAGNETOEXCITONS IN ASYMMETRIC MODULATION-DOPED QUANTUM-WELLS
    HENRIQUES, AB
    SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (04) : 527 - 529
  • [26] DEPHASING TIMES IN MODULATION-DOPED QUANTUM-WELLS
    HAWRYLAK, P
    YOUNG, JF
    BROCKMANN, P
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 432 - 435
  • [27] HOT-ELECTRON COOLING IN PARABOLIC AND MODULATION-DOPED QUANTUM-WELLS AND DOPED SUPERLATTICES
    ARENT, DJ
    SZMYD, D
    HANNA, MC
    JONES, KM
    NOZIK, AJ
    SPRINGTHORPE, AJ
    MAJEED, A
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (04) : 459 - 468
  • [28] DC AND MICROWAVE CHARACTERISTICS OF MODULATION DOPED GA0.47IN0.53AS/INP HFET
    SHAHAR, A
    FEUER, MD
    KOREN, U
    MILLER, BI
    ELECTRONICS LETTERS, 1988, 24 (11) : 702 - 703
  • [29] SHEET ELECTRON-CONCENTRATION AT THE HETEROINTERFACE IN AL0.48IN0.52AS/GA0.47IN0.53AS MODULATION-DOPED STRUCTURES
    ITOH, T
    GRIEM, T
    WICKS, GW
    EASTMAN, LF
    ELECTRONICS LETTERS, 1985, 21 (09) : 373 - 374
  • [30] COOLING OF AN ELECTRON-HOLE PLASMA IN A GA0.47IN0.53AS MULTIPLE-QUANTUM-WELL STRUCTURE
    LOBENTANZER, H
    POLLAND, HJ
    RUHLE, WW
    STOLZ, W
    PLOOG, K
    PHYSICAL REVIEW B, 1987, 36 (02) : 1136 - 1139