ELECTROCHEMICAL ETCHING AND PROFILING OF SILICON

被引：3

作者：

HORANYI, TS

TUTTO, P

机构：

[1] SEMILAB Semiconductor Physics Laboratory RT, H-1047 Budapest

来源：

APPLIED SURFACE SCIENCE | 1993年 / 63卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90114-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dissolution behavior of silicon under high anodic polarization in buffered electrolyte with low fluoride content (less-than-or-equal-to 0.1 mol dm-3) has been studied to determine an appropriate etching condition for the depth profiling of silicon structures. It is shown, that the dependence of the effective dissOlution valence of silicon upon the semiconductor properties can be minimized by the rigorous choice of the electrolyte composition, pH and dissolution potential.

引用

页码：316 / 321

页数：6

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